| PART |
Description |
Maker |
| TC58BVG1S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HTAI0 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BYG0S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M378T2953BGZ0-CD5_CC M378T2953BGZ3-CD5_CC M378T335 |
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
| KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| IBM11N4845BB IBM11N4845CB |
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 带纠错代码保护的小外形双列直插动态RAM模块) 4米72片，杀死保护ECC的上内存模块米72带纠错代码保护的小外形双列直插动态内存模块）
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 甯????唬????ょ?灏??褰㈠?????????AM妯″?)
|
International Business Machines, Corp.
IBM Microeletronics
|
| UN4123 UNR4123 UN4121/4122/4123/4124/412X/412Y |
UN4121/4122/4123/4124/412X/412Y - PNP Transistor with built-in Resistor
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
| KMM372V410CS KMM372V400CK KMM372V400CS KMM372V410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SLN02G72F1BK1MT-CCRT SLN02G72F1BK1MT-DCRT |
2048MB DDR3L ?SDRAM ECC SO-UDIMM
|
List of Unclassifed Man...
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